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    RGT8NS65DGTL datasheet by ROHM Semiconductor

    • IGBT 650V 8A TO-263S
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
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    RGT8NS65DGTL datasheet preview

    RGT8NS65DGTL Frequently Asked Questions (FAQs)

    • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
    • The RGT8NS65DGTL requires a bias voltage of 15V to 20V on the gate driver, and a bootstrap capacitor is recommended to ensure proper biasing. Additionally, a low-ESR capacitor should be used for the power supply decoupling to minimize voltage ripple.
    • The maximum allowed voltage on the drain-source pins is 650V, but it's recommended to operate the device within 80% of the maximum rating to ensure reliability and prevent premature failure.
    • ROHM recommends using an overcurrent protection circuit, such as a current sense resistor and a comparator, to detect and respond to overcurrent conditions. Additionally, an overvoltage protection circuit, such as a zener diode or a voltage supervisor, should be used to detect and respond to overvoltage conditions.
    • The recommended operating temperature range for the RGT8NS65DGTL is -40°C to 150°C, but the device can operate up to 175°C for short periods of time. However, operating the device at high temperatures can reduce its lifespan and affect its performance.
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