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    RFD16N05L datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    RFD16N05L datasheet preview

    RFD16N05L Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the RFD16N05L is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure proper biasing, make sure to provide a stable voltage supply, and follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Typically, Vgs should be between 2V to 5V, and Vds should not exceed 55V.
    • For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity. Keep the component away from heat sources, and use a heat sink if necessary. Follow the recommended PCB layout guidelines for power MOSFETs, including wide traces for power lines and a solid ground plane.
    • To protect the RFD16N05L from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind. Use ESD-sensitive handling procedures during assembly and storage.
    • The recommended gate drive circuits for the RFD16N05L include a gate driver IC or a discrete transistor-based driver. Ensure the gate drive circuit can provide a fast rise and fall time, and can handle the maximum gate-source voltage rating.
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