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    RF1S40N10LE datasheet by Harris Semiconductor

    • 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
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    RF1S40N10LE datasheet preview

    RF1S40N10LE Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the RF1S40N10LE is 2.7 GHz, but it's recommended to operate it at 2.4 GHz for optimal performance.
    • To ensure proper biasing, make sure to follow the recommended voltage and current settings outlined in the datasheet. Typically, this involves applying a voltage of 2.5V to 5.5V and a current of 10mA to 20mA.
    • For optimal performance, it's recommended to follow a 4-layer PCB layout with a dedicated ground plane, and to keep the RF signal traces as short and direct as possible. Additionally, use a 50Ω impedance-matched transmission line to connect the device to the antenna.
    • The RF1S40N10LE has a maximum junction temperature of 150°C. To ensure proper thermal management, use a heat sink or thermal pad, and ensure good airflow around the device. You can also consider using a thermal interface material to improve heat transfer.
    • The RF1S40N10LE has an input impedance of 50Ω and an output impedance of 50Ω. To ensure optimal performance, match the input and output impedance to 50Ω using impedance-matching networks or components.
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