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    Part Img R6504KND3TL1 datasheet by ROHM Semiconductor

    • HIGH-SPEED SWITCHING, NCH 650V 4
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
    • Find it at Findchips.com

    R6504KND3TL1 datasheet preview

    R6504KND3TL1 Frequently Asked Questions (FAQs)

    • The thermal resistance (θJA) of the R6504KND3TL1 is 125°C/W, which is not explicitly mentioned in the datasheet. This information can be obtained from ROHM's application notes or by contacting their support team.
    • To ensure stability with the R6504KND3TL1, it's essential to follow the recommended PCB layout and component placement guidelines, use a suitable output capacitor with low ESR, and add a 10nF to 100nF ceramic capacitor between the VIN and GND pins to filter out noise.
    • Although the datasheet specifies a maximum input voltage of 36V, it's recommended to limit the input voltage to 30V to ensure reliable operation and prevent damage to the device.
    • The R6504KND3TL1 is rated for operation up to 125°C, but its performance and reliability may degrade at high temperatures. It's essential to consider the device's power dissipation, thermal management, and derating factors when operating in high-temperature environments.
    • To calculate the power dissipation of the R6504KND3TL1, use the formula: Pd = (VIN - VOUT) x IOUT. Make sure to consider the device's efficiency, input voltage, output voltage, and output current when calculating the power dissipation.
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