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    Part Img PSMN4R2-30MLDX datasheet by NXP Semiconductors

    • PSMN4R2-30MLD - PSMN4R2-30MLD - N-channel 30 V, 4.2 mOhm logic level MOSFET in LFPAK33 using NextPowerS3 Technology
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    PSMN4R2-30MLDX datasheet preview

    PSMN4R2-30MLDX Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in their application note AN11555, which includes guidelines for thermal pad connection, copper thickness, and via placement to ensure optimal thermal performance.
    • To ensure reliable operation in high-temperature environments, it's essential to follow NXP's guidelines for thermal management, including proper heat sinking, thermal interface material selection, and derating the device's power dissipation according to the ambient temperature.
    • The PSMN4R2-30MLDX has built-in ESD protection and latch-up prevention measures, including a human-body model (HBM) rating of 2 kV and a machine model (MM) rating of 200 V. Additionally, NXP recommends following proper handling and assembly procedures to prevent ESD damage.
    • Yes, the PSMN4R2-30MLDX is AEC-Q101 qualified, making it suitable for use in automotive applications. However, it's essential to ensure that the device is used within its specified operating conditions and that the system design meets the required automotive standards.
    • NXP provides guidelines for soldering and assembly in their application note AN10365, which includes recommendations for soldering temperature, time, and techniques to ensure reliable connections and prevent damage to the device.
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