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    Part Img PSMN3R5-30YL,115 datasheet by NXP Semiconductors

    • N-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PSMN3R5-30YL,115 datasheet preview

    PSMN3R5-30YL,115 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for PSMN3R5-30YL,115 is a D2PAK (TO-263) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
    • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, ensure good thermal conductivity between the device and the heat sink, and follow the recommended thermal design guidelines.
    • The maximum allowed voltage on the gate of PSMN3R5-30YL,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
    • Yes, PSMN3R5-30YL,115 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and EMI.
    • To protect PSMN3R5-30YL,115 from ESD, handle the device with anti-static precautions, use ESD-protected workstations, and ensure that the device is properly grounded during assembly and testing.
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