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    Part Img PSMN1R7-30YL,115 datasheet by NXP Semiconductors

    • N-channel TrenchMOS logic level FET, SOT669 (LFPAK), Tape reel SMD
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PSMN1R7-30YL,115 datasheet preview

    PSMN1R7-30YL,115 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for PSMN1R7-30YL,115 is a D2PAK (TO-263) package with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
    • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, ensure good thermal conductivity between the device and the heat sink, and follow the recommended thermal design guidelines.
    • The maximum allowed voltage on the gate of PSMN1R7-30YL,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
    • While PSMN1R7-30YL,115 can be used in switching applications, it's not recommended for high-frequency switching (>100kHz) due to its relatively high gate charge and internal gate resistance, which may lead to increased power losses and reduced efficiency.
    • To protect PSMN1R7-30YL,115 from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and ensure that the device is properly grounded during assembly and testing.
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