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    Part Img PSMN1R2-25YL,115 datasheet by NXP Semiconductors

    • N-channel 25 V 1.2 mOhm logic level MOSFET in LFPAK, SOT1023 (LFPAK2), Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PSMN1R2-25YL,115 datasheet preview

    PSMN1R2-25YL,115 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for PSMN1R2-25YL,115 is a standard SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
    • To ensure reliable operation of PSMN1R2-25YL,115 in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat dissipation paths and minimizing thermal resistance. Additionally, consider using thermal interface materials and heat sinks if necessary.
    • PSMN1R2-25YL,115 has an integrated ESD protection diode, but it is still recommended to follow proper ESD handling and storage procedures to prevent damage. A minimum of 2kV HBM (Human Body Model) and 200V MM (Machine Model) ESD protection is recommended.
    • Yes, PSMN1R2-25YL,115 is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to consider the device's switching characteristics, including rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rating.
    • The optimal gate resistor value for PSMN1R2-25YL,115 depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω to 100Ω. However, it is recommended to consult the application note and perform simulations to determine the optimal value for your specific design.
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