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    Part Img PSMN070-200B,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 35 A; Q<sub>gd</sub> (typ): 28 nC; R<sub>DS(on)</sub>: 70@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PSMN070-200B,118 datasheet preview

    PSMN070-200B,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for PSMN070-200B,118 is -55°C to 175°C.
    • To ensure safe operating area (SOA) for PSMN070-200B,118, follow the guidelines provided in the datasheet, including limiting the voltage and current within the specified ratings, and ensuring proper thermal management.
    • For optimal performance and thermal management, NXP recommends a PCB layout with a large copper area for heat dissipation, and a layout that minimizes parasitic inductance and resistance.
    • Yes, PSMN070-200B,118 is suitable for high-frequency switching applications up to 1 MHz, but ensure that the gate drive and layout are optimized for high-frequency operation.
    • Handle PSMN070-200B,118 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. The MOSFET has an internal ESD protection diode, but external protection measures may still be necessary.
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