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    Part Img PSMN063-150D,118 datasheet by NXP Semiconductors

    • N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 29 A; Q<sub>gd</sub> (typ): 20 nC; R<sub>DS(on)</sub>: 63@10V mOhm; V<sub>DS</sub>max: 150 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PSMN063-150D,118 datasheet preview

    PSMN063-150D,118 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for PSMN063-150D,118 is -55°C to 150°C.
    • To ensure safe operating area (SOA) for PSMN063-150D,118, follow the guidelines provided in the datasheet, including voltage and current limits, and consider factors such as thermal management, PCB design, and component selection.
    • The recommended gate drive voltage for PSMN063-150D,118 is typically between 4.5V and 10V, but it's essential to consult the datasheet and application notes for specific guidance.
    • To handle ESD protection for PSMN063-150D,118, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider implementing ESD protection circuits in your design.
    • The typical turn-on and turn-off time for PSMN063-150D,118 is around 10-20 ns, but this can vary depending on the specific application, gate drive, and PCB design.
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