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    Part Img PMV65XP,215 datasheet by NXP Semiconductors

    • P-channel TrenchMOS extremely low level FET - Configuration: Single P-channel ; I<sub>D</sub> DC: 3.9 A; Q<sub>gd</sub> (typ): 0.65 nC; R<sub>DS(on)</sub>: 76@4.5V112@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PMV65XP,215 datasheet preview

    PMV65XP,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
    • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor the device's junction temperature and adjust the system accordingly.
    • Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage.
    • Consult the application notes and reference designs provided by NXP. Optimize the device's configuration, including the output filter, input capacitance, and feedback network, for the specific application requirements.
    • Follow standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. Implement ESD protection devices, such as TVS diodes, in the system design.
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