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    Part Img PMV56XN,215 datasheet by NXP Semiconductors

    • uTrenchmos extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 3.76 A; Q<sub>gd</sub> (typ): 1.6 nC; R<sub>DS(on)</sub>: 85@4.5V115@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PMV56XN,215 datasheet preview

    PMV56XN,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots.
    • Monitor the device's junction temperature, output voltage, and current. Implement over-temperature, over-voltage, and over-current protection mechanisms.
    • Consult the application note and reference design for the specific application. Optimize the component selection, PCB layout, and thermal design accordingly.
    • Implement ESD protection diodes and resistors in series with the input pins. Use a TVS (Transient Voltage Suppressor) diode for additional protection.
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