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    Part Img PMR370XN,115 datasheet by NXP Semiconductors

    • N-channel uTrenchmos extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.84 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 440@4.5V650@2.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT416 (SC-75); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PMR370XN,115 datasheet preview

    PMR370XN,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical, and use short, direct traces for the input and output signals. Avoid vias and layer changes near the device.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow, and consider using a thermal pad or thermal tape to improve heat transfer.
    • The internal ESD protection is designed to protect against human body model (HBM) and charged device model (CDM) events. However, it may not provide sufficient protection against more severe ESD events or multiple strikes. Additional external ESD protection may be necessary in harsh environments.
    • Yes, but with caution. The device is designed for linear power supply applications. In switching power supply applications, ensure that the device is properly bypassed and filtered to prevent high-frequency noise and voltage spikes from affecting its operation.
    • Check the PCB layout for parasitic inductance and capacitance. Ensure that the input and output capacitors are properly selected and placed. Verify that the device is properly bypassed and decoupled. Use a scope to analyze the output voltage and current waveforms.
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