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    Part Img PMK30EP,518 datasheet by NXP Semiconductors

    • P-channel TrenchMOS extremely low level FET - Configuration: Single P-channel ; I<sub>D</sub> DC: -14.9 A; R<sub>DS(on)</sub>: 19@-10V mOhm; V<sub>DS</sub>max: -30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13&quot;
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    PMK30EP,518 datasheet preview

    PMK30EP,518 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the power and ground traces as short and wide as possible, and use vias to connect the power and ground planes to the device pins.
    • Use a thermal pad or thermal interface material to improve heat dissipation. Ensure good airflow around the device, and consider using a heat sink or thermal management system if operating temperatures exceed 125°C.
    • Use 100nF to 1uF ceramic capacitors with a voltage rating of 10V or higher, placed as close as possible to the device pins. Additional bulk capacitors (e.g., 10uF) can be used on the power supply lines.
    • Use ESD protection devices (e.g., TVS diodes) on the input and output pins, and ensure that the PCB design includes ESD protection features such as guard rings and ESD-safe layout practices.
    • The internal voltage regulator is designed for low-power applications. For high-power applications, an external voltage regulator is recommended to ensure stable operation and to prevent overheating.
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