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    Part Img PMEG3020EH,115 datasheet by NXP Semiconductors

    • 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 72@VR=1V pF; Configuration: single ; I<sub>F</sub>: 2 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 1@VR=30V mA; V<sub>F</sub>max: 620@IF=2A mV; V<sub>R</sub>: 30 V; Package: SOD123F (SOD2); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    PMEG3020EH,115 datasheet preview

    PMEG3020EH,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
    • Implement a proper thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
    • Exceeding the maximum Tj rating can lead to reduced lifespan, decreased performance, and potential device failure. Ensure proper thermal management to stay within the recommended operating temperature range.
    • Use a combination of ceramic and electrolytic capacitors, and consider adding a common-mode choke and shielding to minimize EMI. Optimize the filter design using simulation tools and consider the specific application requirements.
    • Choose capacitors with low ESR, high ripple current rating, and suitable voltage rating. Consider the application's specific requirements, such as high-frequency noise filtering and transient response.
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