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    Part Img PMEG3010BEA,115 datasheet by NXP Semiconductors

    • 1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package - C<sub>d</sub> max.: 70@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.15@VR=30V mA; V<sub>F</sub>max: 560@IF=1A mV; V<sub>R</sub>: 30 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    PMEG3010BEA,115 datasheet preview

    PMEG3010BEA,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
    • Implement a proper thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
    • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. A 10uF input capacitor and a 22uF output capacitor are recommended.
    • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper PCB layout and grounding. Add EMI filters or common-mode chokes if necessary.
    • The maximum allowed voltage drop is 0.5V. Ensure the input voltage is within the recommended range, and the output voltage is within the specified tolerance.
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