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    Part Img PHT11N06LT,135 datasheet by NXP Semiconductors

    • TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 10.7 A; Q<sub>gd</sub> (typ): 10 nC; R<sub>DS(on)</sub>: 40@5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT223 (SC-73); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    PHT11N06LT,135 datasheet preview

    PHT11N06LT,135 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the PHT11N06LT,135 is 100 kHz.
    • To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions, use a suitable thermal design, and consider derating the device's power dissipation.
    • The PHT11N06LT,135 is rated for a maximum drain-source voltage of 60V. If your application requires a higher voltage, you may need to consider a different device or add external protection circuitry.
    • To protect the PHT11N06LT,135 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding external ESD protection circuitry in your design.
    • For optimal thermal performance, follow the recommended layout and thermal design guidelines in the datasheet, including using a thermal pad, and consider using a heat sink or thermal interface material.
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