PHKD6N02LT,518 datasheet by NXP Semiconductors

Description Dual TrenchMOS logic level FET - Configuration: Dual N-channel ; I<sub>D</sub> DC: 6 A; Q<sub>gd</sub> (typ): 10 nC; R<sub>DS(on)</sub>: 20@5V45@4.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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PHKD6N02LT

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