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    Part Img PHK13N03LT,518 datasheet by NXP Semiconductors

    • TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 13.8 A; Q<sub>gd</sub> (typ): 3.9 nC; R<sub>DS(on)</sub>: 20@10V26@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13&quot;
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHK13N03LT,518 datasheet preview

    PHK13N03LT,518 Frequently Asked Questions (FAQs)

    • The PHK13N03LT,518 can operate from -40°C to 150°C, but the maximum junction temperature (Tj) should not exceed 175°C.
    • To ensure proper biasing, connect Vgs to a voltage source between 2V and 10V, and Vds to a voltage source between 10V and 30V. Also, ensure the gate-source voltage (Vgs) is within the recommended range of -10V to 10V.
    • For optimal thermal performance, use a PCB with a thermal pad and ensure good thermal conductivity. Keep the device away from heat sources and use a heat sink if necessary. Follow NXP's recommended PCB layout guidelines for power MOSFETs.
    • Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the device is stored in an ESD-protected environment, and use ESD-protected packaging during transportation.
    • The SOA limits for the PHK13N03LT,518 are defined by the maximum drain-source voltage (Vds), drain current (Id), and power dissipation (Pd). Refer to the datasheet for specific SOA curves and limits.
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