The PHK13N03LT,518 can operate from -40°C to 150°C, but the maximum junction temperature (Tj) should not exceed 175°C.
To ensure proper biasing, connect Vgs to a voltage source between 2V and 10V, and Vds to a voltage source between 10V and 30V. Also, ensure the gate-source voltage (Vgs) is within the recommended range of -10V to 10V.
For optimal thermal performance, use a PCB with a thermal pad and ensure good thermal conductivity. Keep the device away from heat sources and use a heat sink if necessary. Follow NXP's recommended PCB layout guidelines for power MOSFETs.
Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the device is stored in an ESD-protected environment, and use ESD-protected packaging during transportation.
The SOA limits for the PHK13N03LT,518 are defined by the maximum drain-source voltage (Vds), drain current (Id), and power dissipation (Pd). Refer to the datasheet for specific SOA curves and limits.