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    Part Img PHK04P02T,518 datasheet by NXP Semiconductors

    • P-channel enhancement mode MOS transistor - Configuration: single P-channel ; I<sub>D</sub> DC: 4.66 A; Q<sub>gd</sub> (typ): 1.83 nC; R<sub>DS(on)</sub>: 120@4.5V150@2.5V180@1.8V mOhm; V<sub>DS</sub>max: 16 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13&quot;
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    PHK04P02T,518 datasheet preview

    PHK04P02T,518 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal interface materials, such as thermal grease or thermal tape, to improve heat transfer between the device and the heat sink.
    • The PHK04P02T,518 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
    • The PHK04P02T,518 is not hermetically sealed, so it's not recommended for use in high-humidity environments. If operation in humid environments is necessary, consider using a conformal coating or potting the device to protect it from moisture.
    • NXP recommends soldering the PHK04P02T,518 using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds. Hand soldering is not recommended due to the device's small size and lead pitch.
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