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    Part Img PHB45NQ10T,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 47 A; Q<sub>gd</sub> (typ): 25 nC; R<sub>DS(on)</sub>: 25@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHB45NQ10T,118 datasheet preview

    PHB45NQ10T,118 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow NXP's recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
    • Yes, the PHB45NQ10T,118 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
    • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to prevent damage from voltage and current surges.
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