PHB29N08T datasheet by NXP Semiconductors

Description PHB29N08T - TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 27 A; Qgd (typ): 9 nC; RDS(on): 50@11V mOhm; VDSmax: 75 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
ECCN EAR99
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PHB29N08T,118 PHB29N08T

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