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    Part Img PHB110NQ08T,118 datasheet by NXP Semiconductors

    • N-channel Trenchmos standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 48.2 nC; R<sub>DS(on)</sub>: 9@10V mOhm; V<sub>DS</sub>max: 75 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHB110NQ08T,118 datasheet preview

    PHB110NQ08T,118 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11173, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 1-10uF, and a voltage rating that matches the input voltage. The application note AN11173 provides more detailed guidance on input capacitor selection.
    • The enable pin (EN) has a maximum allowed voltage of 6V, which is higher than the recommended operating voltage of 5V. However, it's essential to ensure that the voltage on the EN pin does not exceed 6V to prevent damage to the device.
    • The PHB110NQ08T,118 is rated for operation up to 150°C, but it's essential to consider the derating curves and thermal management guidelines provided in the datasheet to ensure reliable operation in high-temperature environments.
    • Common issues include incorrect input voltage, insufficient input capacitance, or incorrect enable pin configuration. Check the application note AN11173 for troubleshooting guidelines and ensure that the device is properly configured and powered.
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