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    Part Img PH8230E,115 datasheet by NXP Semiconductors

    • N-channel Trenchmos enhanced logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 67 A; R<sub>DS(on)</sub>: 8.2@10V13@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT669 (LFPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PH8230E,115 datasheet preview

    PH8230E,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Refer to the NXP application note AN11555 for more details.
    • Implement thermal management by providing a heat sink or a thermal pad on the exposed pad of the device. Ensure good airflow and avoid blocking the airflow around the device. Operate within the recommended temperature range of -40°C to 125°C.
    • The maximum allowed voltage on the VDD pin is 5.5V. Exceeding this voltage may damage the device. Ensure that the power supply voltage is within the recommended range of 4.5V to 5.5V.
    • Implement ESD protection by using ESD diodes or TVS diodes on the input and output pins. Follow the guidelines in the NXP application note AN11555 for ESD protection. Handle the device with care, and use an ESD wrist strap or mat during assembly.
    • The recommended input capacitance is 10nF to 100nF. A larger capacitance may affect the device's performance and stability. Use a high-quality, low-ESR capacitor with a voltage rating of at least 6.3V.
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