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    Part Img PH2625L,115 datasheet by NXP Semiconductors

    • N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 100 A; Q<sub>gd</sub> (typ): 7.3 nC; R<sub>DS(on)</sub>: 4.1@4.5V 2.8@10V mOhm; V<sub>DS</sub>max: 25 V; Package: SOT669 (LFPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PH2625L,115 datasheet preview

    PH2625L,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
    • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
    • Monitor the device's junction temperature, output voltage, and current. Implement over-temperature protection, over-voltage protection, and over-current protection to prevent damage.
    • Use the device's low-power modes, adjust the switching frequency, and optimize the output voltage. Implement power-saving features like dynamic voltage scaling and clock gating.
    • Implement ESD protection diodes, use a grounded metal can or shield, and ensure a low-impedance path to ground. Follow proper handling and storage procedures to prevent ESD damage.
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