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    Part Img PEMH13,315 datasheet by NXP Semiconductors

    • NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm - hFE max:&gt;100 ; hFE min: 100 ; I<sub>O</sub> max: 100 mA; Input resistor: 4.7 kOhm; Polarity: 2x NPN ; Ptot max: 200 mW; Resistor ratio: 10 ; VCEO max: 50 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    PEMH13,315 datasheet preview

    PEMH13,315 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical, and use a via stitching pattern to reduce EMI. Refer to NXP's application note AN11529 for more details.
    • Implement a proper thermal management system, including a heat sink and thermal interface material. Ensure good airflow, and consider using a thermal pad or thermal tape to improve heat dissipation. Monitor the device's junction temperature (Tj) and adjust the system design accordingly.
    • Using a different voltage regulator may affect the PEMH13,315's performance, stability, and reliability. The recommended regulator (e.g., NXP's PCA9450) is optimized for the PEMH13,315's specific requirements. If you must use a different regulator, ensure it meets the recommended specifications and consult with NXP's support team.
    • Check the oscillator's frequency and amplitude using an oscilloscope. Verify the correct crystal resonator selection and layout. Ensure the oscillator's supply voltage is within the recommended range. If issues persist, consult NXP's application note AN11529 or contact their support team.
    • Implement a redundant design, use error detection and correction mechanisms, and ensure compliance with relevant safety standards (e.g., IEC 61508). Perform thorough testing, including environmental and radiation testing, and consult with NXP's support team for guidance on specific requirements.
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