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    Part Img PEMH13,115 datasheet by NXP Semiconductors

    • NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm - hFE max:&gt;100 ; hFE min: 100 ; I<sub>O</sub> max: 100 mA; Input resistor: 4.7 kOhm; Polarity: 2x NPN ; Ptot max: 200 mW; Resistor ratio: 10 ; VCEO max: 50 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
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    PEMH13,115 datasheet preview

    PEMH13,115 Frequently Asked Questions (FAQs)

    • NXP recommends a symmetrical PCB layout with a solid ground plane, and keeping the input and output tracks as short as possible. Additionally, it's essential to follow the recommended pinout and component placement to minimize electromagnetic interference (EMI) and ensure optimal performance.
    • To ensure proper biasing, connect the VCC pin to a stable 3.3V or 5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
    • The PEMH13,115 is rated for operation from -40°C to +125°C, making it suitable for a wide range of industrial and automotive applications.
    • To prevent electrostatic discharge (ESD) damage, handle the PEMH13,115 with an ESD wrist strap or mat, and ensure that the PCB is properly grounded. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.
    • NXP recommends a soldering profile with a peak temperature of 260°C, and a dwell time of 30-60 seconds. It's essential to follow the recommended soldering profile to prevent damage to the device.
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