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    Part Img PEMH10,115 datasheet by NXP Semiconductors

    • NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm - hFE max:&gt;100 ; hFE min: 100 ; I<sub>O</sub> max: 100 mA; Input resistor: 2.2 kOhm; Polarity: 2x NPN ; Ptot max: 200 mW; Resistor ratio: 21 ; VCEO max: 50 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
    • Original
    • Yes
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    • EAR99
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    PEMH10,115 datasheet preview

    PEMH10,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical, and use a via stitching pattern to connect the ground plane to the heat sink.
    • Use a heat sink with a thermal resistance of ≤ 10°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/mK. Ensure good contact between the heat sink and the PEMH10,115.
    • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation and prevent damage.
    • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input lines to protect the PEMH10,115 from electrostatic discharge. Follow the recommended ESD protection circuit in the datasheet.
    • The recommended input capacitance value is 10nF to 100nF, depending on the specific application and noise requirements. A larger capacitance value can help filter out noise, but may affect the response time.
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