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    Part Img PDTC143XE,115 datasheet by NXP Semiconductors

    • NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm - Complement: PDTA143XE ; hFE max:&gt;50 ; hFE min: 50 ; I<sub>O</sub> max: 100 mA; Input resistor: 4.7 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 2.1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.21.00.95
    • 8541.21.00.80
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    PDTC143XE,115 datasheet preview

    PDTC143XE,115 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11561, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
    • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 1-10uF, and a voltage rating that matches the input voltage. The application note AN11561 provides more detailed guidance on capacitor selection.
    • The maximum allowed voltage drop across the PDTC143XE,115 is 1.5V. Exceeding this voltage drop may affect the device's performance and reliability.
    • The PDTC143XE,115 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at higher temperatures. NXP recommends derating the device's power dissipation and using thermal management techniques to ensure reliable operation in high-temperature environments.
    • NXP recommends following the guidelines in the application note AN11561 for EMC design considerations, including proper PCB layout, component selection, and shielding. Additionally, ensure that the device is used within the specified frequency range and that the input and output filters are designed to meet the required EMC standards.
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