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    Part Img PD84008-E datasheet by STMicroelectronics

    • RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    PD84008-E datasheet preview

    PD84008-E Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
    • The input capacitor values depend on the input voltage, output voltage, and desired output ripple. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5323 for more detailed guidance on capacitor selection.
    • The PD84008-E is rated for operation up to 105°C ambient temperature, but it's recommended to derate the output current and voltage to ensure reliable operation. Consult the datasheet and application note AN5323 for more information on thermal management and derating guidelines.
    • The PD84008-E has built-in OVP and UVP features, but they can be adjusted or customized using external resistors and capacitors. Consult the datasheet and application note AN5323 for more information on implementing OVP and UVP using the device's internal and external components.
    • A minimum of 22uF ceramic capacitors with a low equivalent series resistance (ESR) are recommended for low output ripple. However, the optimal output capacitor value and type depend on the specific application requirements and output voltage. Consult the application note AN5323 for more guidance on output capacitor selection.
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