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    Part Img PD57006S-E datasheet by STMicroelectronics

    • RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    PD57006S-E datasheet preview

    PD57006S-E Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN4979, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and frequency. A general guideline is to choose a capacitor with a voltage rating at least 1.5 times the maximum input voltage, and a capacitance value between 1uF to 10uF. Consult the datasheet and application notes for more specific guidance.
    • The maximum allowed voltage drop across the PD57006S-E is typically around 1.5V to 2V, depending on the specific application and operating conditions. Exceeding this voltage drop may lead to reduced efficiency, increased heat generation, or even device failure.
    • The PD57006S-E is rated for operation up to 150°C, but the device's performance and reliability may degrade at high temperatures. Ensure proper thermal management, and consider derating the device's specifications according to the temperature derating curves provided in the datasheet.
    • Follow the guidelines in the application note AN4846 for designing an EMC-compliant layout, including proper component placement, shielding, and filtering. Additionally, ensure that the PD57006S-E is used within its specified operating conditions and that the system design meets relevant EMC standards.
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