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    Part Img PD55035STR-E datasheet by STMicroelectronics

    • RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    PD55035STR-E datasheet preview

    PD55035STR-E Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN4979, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and ripple requirements. A general guideline is to choose a capacitor with a voltage rating of at least 1.5 times the maximum input voltage, and a capacitance value that ensures the desired ripple voltage. STMicroelectronics recommends using a low-ESR capacitor with a value between 10uF to 22uF.
    • The maximum allowed voltage drop across the PD55035STR-E is 0.5V. Exceeding this voltage drop may affect the device's performance, efficiency, and reliability. It's essential to ensure that the input voltage is within the recommended range and that the output voltage is properly regulated.
    • The PD55035STR-E is rated for operation up to 150°C, but it's essential to consider the derating curves and thermal management guidelines provided in the datasheet. Proper heat sinking, thermal interface materials, and airflow can help ensure reliable operation in high-temperature environments.
    • STMicroelectronics provides a troubleshooting guide in the application note AN4979, which covers common issues, diagnostic techniques, and corrective actions. Additionally, engineers can use oscilloscopes, thermal cameras, and other diagnostic tools to identify and resolve problems.
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