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    Part Img PBSS306NZ,135 datasheet by NXP Semiconductors

    • 100 V, 5.1 A NPN low VCEsat (BISS) transistor; Package: SOT223 (SC-73); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    PBSS306NZ,135 datasheet preview

    PBSS306NZ,135 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for PBSS306NZ,135 is a standard SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, such as providing adequate heat sinking, using thermal vias, and minimizing thermal resistance between the device and the PCB.
    • The maximum allowed voltage on the input pins of PBSS306NZ,135 is 6 V, which is the absolute maximum rating. However, for reliable operation, it is recommended to keep the input voltage within the recommended operating range of 2.7 V to 5.5 V.
    • While PBSS306NZ,135 can handle high currents, it is not recommended for high-current switching applications due to its limited power dissipation capability. For high-current switching, it is recommended to use a dedicated high-current switch or a power MOSFET with a suitable current rating.
    • To protect PBSS306NZ,135 from ESD and latch-up, it is recommended to follow proper ESD handling and protection guidelines, such as using ESD-safe handling equipment, providing ESD protection circuits, and using latch-up protection devices or techniques.
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