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    MT9V111IA7ATC-DR datasheet by onsemi

    • CMOS SENSOR
    • Original
    • Yes
    • Yes
    • Obsolete
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    MT9V111IA7ATC-DR datasheet preview

    MT9V111IA7ATC-DR Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the MT9V111IA7ATC-DR can be found in the Onsemi application note AND9393/D, which provides guidelines for PCB design, layout, and thermal management.
    • Optimizing image quality requires careful tuning of the sensor's settings, such as gain, exposure, and black level. Onsemi provides an Image Sensor Tuning Guide (AND9344/D) that provides guidelines for optimizing image quality.
    • The MT9V111IA7ATC-DR is rated for operation from -20°C to 70°C, but it can be operated up to 85°C with reduced performance and lifetime. Consult the datasheet for more information on temperature-related specifications.
    • The MT9V111IA7ATC-DR uses a parallel interface, and Onsemi provides a detailed interface timing diagram in the datasheet. Additionally, Onsemi offers evaluation boards and software development kits (SDKs) to help with integration and development.
    • The power consumption of the MT9V111IA7ATC-DR depends on the operating mode and clock frequency. Typical power consumption is around 150 mW, but it can be as low as 50 mW in low-power mode. Consult the datasheet for more information on power consumption.
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