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    MRF8S21120HSR3 datasheet by Freescale Semiconductor

    • RF FETs, Discrete Semiconductor Products, FET RF N-CH 2.1GHZ 28V NI780HS
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • Find it at Findchips.com

    MRF8S21120HSR3 datasheet preview

    MRF8S21120HSR3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the MRF8S21120HSR3 is -40°C to 125°C.
    • To optimize performance, ensure proper thermal management, use a low-loss PCB material, and follow the recommended layout and grounding guidelines. Additionally, optimize the input and output matching networks to minimize losses and ensure maximum power transfer.
    • The recommended PCB layout and grounding scheme involves using a multi-layer PCB with a solid ground plane, placing the device near the edge of the board, and using vias to connect the ground pins to the ground plane. A detailed layout and grounding scheme is provided in the application note AN1955.
    • Thermal management is critical for the MRF8S21120HSR3. Ensure good heat sinking by using a heat sink with a thermal resistance of less than 1°C/W, and apply a thermal interface material (TIM) between the device and heat sink. Additionally, ensure good airflow around the device and heat sink.
    • The recommended input and output matching networks for the MRF8S21120HSR3 depend on the specific application and frequency of operation. However, a general guideline is to use a low-pass filter topology for the input matching network and a π-network topology for the output matching network. The exact component values can be determined using simulation tools such as ADS or Genesys.
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