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    MRF6VP2600HR6 datasheet by Freescale Semiconductor

    • RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 600W NI1230
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    MRF6VP2600HR6 datasheet preview

    MRF6VP2600HR6 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the MRF6VP2600HR6 is -40°C to +150°C.
    • To optimize performance, ensure proper thermal management, use a high-quality PCB with good thermal conductivity, and follow the recommended layout and grounding guidelines. Additionally, optimize the input and output matching networks to minimize losses and ensure maximum power transfer.
    • The recommended biasing scheme for the MRF6VP2600HR6 is a single-supply voltage (Vdd) of 28V, with a quiescent current (Idq) of 120mA. The gate voltage (Vg) should be set to around 2.5V to 3.5V for optimal performance.
    • To protect the MRF6VP2600HR6 from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the PCB and components are properly grounded, and use ESD protection devices such as TVS diodes or ESD protection arrays.
    • The maximum safe operating area (SOA) for the MRF6VP2600HR6 is defined by the maximum voltage and current ratings. The device can operate safely up to 65V drain-source voltage and 6A drain current.
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