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    Part Img MJD3055T4 datasheet by STMicroelectronics

    • SMD, Epitaxial Power Amp., 60V 10A 20W, Silicon NPN Transistor
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
    • 8541.29.00.95
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    MJD3055T4 datasheet preview

    MJD3055T4 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the MJD3055T4 is -40°C to 150°C.
    • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The recommended biasing voltage is typically between 2-5V.
    • The maximum collector current rating for the MJD3055T4 is 5A.
    • To protect the MJD3055T4 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
    • The recommended PCB layout for the MJD3055T4 includes a solid ground plane, short and wide traces for the collector and emitter, and a heat sink for high-power applications.
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