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    Part Img MBR30H100CT-G1 datasheet by Diodes Incorporated

    • Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 100V TO220
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.10.00.80
    • 8541.10.00.80
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    MBR30H100CT-G1 datasheet preview

    MBR30H100CT-G1 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the MBR30H100CT-G1 is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
    • To ensure reliable operation of the MBR30H100CT-G1 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
    • The maximum allowed voltage spike for the MBR30H100CT-G1 is 100V, as specified in the datasheet. However, it is recommended to limit voltage spikes to 80V or less to ensure reliable operation and prevent damage to the device.
    • Yes, the MBR30H100CT-G1 can be used in a switching regulator application, but it is recommended to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is limited to 100kHz or less to prevent overheating and reduce electromagnetic interference (EMI).
    • The power dissipation of the MBR30H100CT-G1 can be calculated using the formula Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. The maximum power dissipation rating is 30W.
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