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    Part Img MAX3355EEUD+T datasheet by Maxim Integrated Products

    • ±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8542.39.00.01
    • 8542.39.00.00
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    MAX3355EEUD+T datasheet preview

    MAX3355EEUD+T Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the MAX3355EEUD+T involves keeping the input and output traces as short as possible, using a solid ground plane, and placing the device close to the load. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.
    • To ensure proper power-up and initialization, the MAX3355EEUD+T requires a power-on reset (POR) circuit to ensure that the internal registers are reset to their default values. Additionally, the device requires a stable input voltage within the recommended operating range, and the EN pin should be tied to a logic high to enable the device.
    • The maximum current that the MAX3355EEUD+T can deliver is dependent on the input voltage, output voltage, and package thermal resistance. The output current capability can be calculated using the equation: IOUT = (VIN - VOUT) / (RDS(ON) * (TJ - TA)), where RDS(ON) is the on-resistance of the internal FET, TJ is the junction temperature, and TA is the ambient temperature.
    • The MAX3355EEUD+T has built-in overvoltage protection (OVP) and undervoltage lockout (UVLO) features. However, additional external protection circuits can be added to provide extra protection against overvoltage and undervoltage conditions. This can include using voltage regulators, TVS diodes, and/or Zener diodes to clamp the input voltage within the recommended operating range.
    • The thermal derating of the MAX3355EEUD+T is dependent on the package type and the maximum junction temperature (TJ). The maximum ambient temperature can be calculated using the equation: TA = TJ - (PD * θJA), where PD is the power dissipation, and θJA is the junction-to-ambient thermal resistance.
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