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    Part Img M29W800DB70N1 datasheet by STMicroelectronics

    • Memory, Integrated Circuits (ICs), IC FLASH 8MBIT 70NS 48TSOP
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8542.32.00.51
    • 8542.32.00.50
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    M29W800DB70N1 datasheet preview

    M29W800DB70N1 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for the M29W800DB70N1 is 2.7V to 3.6V, with a typical voltage of 3.3V.
    • During power-up, the HOLD# signal should be kept high until the power supply has reached the recommended operating voltage range. During power-down, the HOLD# signal should be kept low to prevent any unwanted writes or erases.
    • The WP# signal is used to protect the memory from unwanted writes or erases. When WP# is low, the memory is write-protected, and when WP# is high, the memory is writable. You can use WP# to protect specific sectors or the entire memory array.
    • To perform a sector erase, you need to send the sector erase command (0x20) followed by the sector address. The timing requirements include a minimum of 10us for the erase pulse width and a maximum of 80us for the erase timeout.
    • The M29W800DB70N1 has a maximum of 100,000 erase cycles per sector. Exceeding this limit can reduce the device's lifespan and affect its reliability. It's essential to implement wear leveling and error correction mechanisms to minimize the impact of erase cycles on the device's lifespan.
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