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    Part Img M29W008AB120N6 datasheet by STMicroelectronics

    • 8 MBIT (1MB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8542.32.00.51
    • 8542.32.00.50
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    M29W008AB120N6 datasheet preview

    M29W008AB120N6 Frequently Asked Questions (FAQs)

    • The M29W008AB120N6 has a minimum of 100,000 erase cycles per sector, and a total of 1,000,000 erase cycles per device.
    • The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
    • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The device should be in a standby state during power-up.
    • The device provides a Ready/Busy# (RB#) output signal that indicates the device's status. When RB# is low, the device is busy, and when it's high, the device is ready for the next operation.
    • The WP# signal is used to protect the entire device or specific sectors from accidental writes or erases. When WP# is low, the device or sector is write-protected.
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