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    Part Img M29F080D70N1 datasheet by STMicroelectronics

    • 8 MBIT (1MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8542.32.00.51
    • 8542.32.00.50
    • Find it at Findchips.com

    M29F080D70N1 datasheet preview

    M29F080D70N1 Frequently Asked Questions (FAQs)

    • The M29F080D70N1 has a minimum of 100,000 erase cycles per sector, and a total of 1,000,000 erase cycles per device.
    • The HOLD# signal should be kept low during read and write operations to ensure that the device is not put into a hold state. If the HOLD# signal is asserted high, the device will enter a hold state and all operations will be suspended.
    • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures that the device is properly initialized and ready for operation.
    • The device density and organization can be determined by reading the device ID and sector protection registers. The device ID register contains information about the device density, and the sector protection registers indicate the organization of the device.
    • The Write Enable Latch (WEL) bit is used to enable or disable write operations to the device. When WEL is set to 1, write operations are enabled, and when WEL is set to 0, write operations are disabled.
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