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    Part Img M29F080D70M6 datasheet by STMicroelectronics

    • 8 MBIT (1MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8542.32.00.51
    • 8542.32.00.50
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    M29F080D70M6 datasheet preview

    M29F080D70M6 Frequently Asked Questions (FAQs)

    • The M29F080D70M6 has a minimum of 100,000 erase cycles per sector, and a minimum of 10,000 erase cycles per block.
    • The HOLD# signal should be kept low during read and write operations to ensure that the device is not put into a hold state. If the HOLD# signal is asserted during a read or write operation, the device will enter a hold state and the operation will be suspended.
    • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures that the device is properly initialized and ready for operation.
    • The M29F080D70M6 has a software-based write protection mechanism that can be enabled or disabled using specific commands. The device also has a hardware-based write protection mechanism that can be enabled using the WP# pin. It is recommended to use both mechanisms to ensure that the device is properly protected against unintended writes.
    • The M29F080D70M6 has an operating temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
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