A good PCB layout for the L6561D013TR involves keeping the high-frequency switching nodes (e.g., drain-source voltage) away from sensitive analog nodes, using a solid ground plane, and minimizing loop areas. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
When selecting a transformer for the L6561D013TR, consider the maximum output power, input voltage, and output voltage. Ensure the transformer's turns ratio, inductance, and core material are suitable for the application. Consult the datasheet and application notes for guidance on transformer selection.
The maximum ambient temperature for the L6561D013TR is 85°C (according to the datasheet). However, the device's junction temperature (TJ) should not exceed 150°C. Ensure proper thermal design and heat dissipation to prevent overheating.
Implement OVP by connecting a voltage divider network to the VCC pin, which monitors the output voltage. When the output voltage exceeds the desired threshold, the voltage divider network triggers the OVP circuit, which shuts down the device. Consult the datasheet and application notes for a detailed implementation example.
The recommended input capacitor value for the L6561D013TR depends on the input voltage, output power, and desired ripple voltage. A general guideline is to use a capacitor with a value between 1 μF to 10 μF, with a voltage rating higher than the maximum input voltage. Consult the datasheet and application notes for more specific guidance.
L6561D013TR datasheet
by STMicroelectronics
