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    Part Img IRLZ34NS datasheet by International Rectifier

    • HEXFET Power MOSFET
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRLZ34NS datasheet preview

    IRLZ34NS Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRLZ34NS is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure safe operation.
    • Thermal management is critical for the IRLZ34NS, especially in high-power applications. Ensure good heat sinking, use a thermal interface material (TIM) between the device and heat sink, and consider using a heat sink with a high thermal conductivity. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
    • The recommended gate drive voltage for the IRLZ34NS is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to ensure that the gate drive voltage does not exceed the maximum rated gate-source voltage (VGS) of ±20V.
    • Yes, the IRLZ34NS is suitable for high-frequency switching applications up to several hundred kHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and clean switching signal.
    • To protect the IRLZ34NS from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider implementing ESD protection circuits, such as TVS diodes or ESD protection arrays, in the device's circuitry.
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