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    Part Img IRLZ24NSPBF datasheet by International Rectifier

    • 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ24NS with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRLZ24NSPBF datasheet preview

    IRLZ24NSPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLZ24NSPBF is typically around 2°C/W (junction-to-ambient) and 0.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
    • Yes, the IRLZ24NSPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure reliable operation.
    • To ensure proper cooling, provide a sufficient heat sink, use thermal interface material (TIM) to reduce thermal resistance, and ensure good airflow around the device. Additionally, consider the PCB layout and thermal management strategies to minimize thermal hotspots.
    • The recommended gate drive voltage for the IRLZ24NSPBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    • The IRLZ24NSPBF is compatible with standard logic levels (TTL, CMOS, etc.). However, it's essential to ensure the gate drive voltage is within the recommended range and that the logic level is compatible with the device's input threshold voltage.
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