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    IRLZ24N datasheet by International Rectifier

    • HEXFET Power Mosfet
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRLZ24N datasheet preview

    IRLZ24N Frequently Asked Questions (FAQs)

    • The maximum junction temperature of IRLZ24N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
    • Power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs). You can find the values of Vds, Ids, Vgs, and Igs in the datasheet.
    • The recommended gate resistor value for IRLZ24N is between 10 ohms to 100 ohms, depending on the application and switching frequency.
    • Yes, IRLZ24N is suitable for high-frequency switching applications up to 1 MHz, but you need to ensure proper thermal management and consider the effects of switching losses.
    • You can protect IRLZ24N from overvoltage and overcurrent by using a voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit.
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