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    Part Img IRLR3105TRPBF datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 25A DPAK
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRLR3105TRPBF datasheet preview

    IRLR3105TRPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLR3105TRPBF is typically around 3.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
    • Yes, the IRLR3105TRPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to ensure that the PCB layout and design are optimized for high-frequency operation to minimize losses and ringing.
    • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the junction temperature below the maximum rated value (150°C).
    • The recommended gate drive voltage for the IRLR3105TRPBF is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    • Yes, the IRLR3105TRPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch.
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