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    Part Img IRLR3103PBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3103 with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRLR3103PBF datasheet preview

    IRLR3103PBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLR3103PBF depends on the specific application and PCB design. However, a typical value for junction-to-ambient thermal resistance (RθJA) is around 40-50°C/W. For more accurate calculations, consider using thermal simulation software or consulting with a thermal expert.
    • Yes, the IRLR3103PBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductance and capacitance.
    • To ensure proper biasing, follow the recommended gate drive voltage and current requirements specified in the datasheet. Additionally, consider using a gate driver IC or a dedicated gate drive circuit to provide a clean and stable gate signal.
    • For optimal thermal performance, use a PCB with a solid copper ground plane and a thermal relief pattern under the device. Ensure good thermal conduction by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
    • Yes, the IRLR3103PBF can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
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