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    Part Img IRLR2703PBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR2703 with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRLR2703PBF datasheet preview

    IRLR2703PBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLR2703PBF depends on the specific application and PCB design. However, a typical value for junction-to-ambient thermal resistance (RθJA) is around 40-50°C/W. For a more accurate estimate, consult the application note AN-1140 from International Rectifier.
    • Yes, the IRLR2703PBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the gate drive requirements, layout, and decoupling to minimize switching losses and ensure reliable operation.
    • To ensure proper biasing, follow the recommended gate drive voltage and current requirements. Typically, a gate drive voltage of 10-15 V and a current of 1-2 A is recommended. Also, ensure the gate resistor is properly sized to prevent oscillations and ringing.
    • The maximum allowed case temperature for the IRLR2703PBF is 150°C. However, it's recommended to keep the case temperature below 125°C for reliable long-term operation.
    • Yes, the IRLR2703PBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure proper gate drive synchronization, layout, and thermal management to prevent uneven current sharing and thermal runaway.
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